MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron
부품 번호: MT40A512M16AD-062E ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $12.24 | $12.24 |
| 10 | $11.5 | $115.00 |
| 100 | $10.8 | $1,080.00 |
| 500 | $9.9 | $4,950.00 |
| 1,000 | $9.2 | $9,200.00 |
MT40A512M16AD-062E 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC DDR memory family used as main memory in computing and embedded systems. Compared with DDR3, DDR4 lowers core supply voltage, increases bank groups, and raises maximum data rates. In the memory hierarchy it sits as DRAM component -> DDR SDRAM -> synchronous DRAM -> semiconductor memory, bridging the gap between nonvolatile storage and processor caches.
Key features of this part include the x16 data-width organization that allows single-component designs in embedded processors and FPGAs, the -062E speed grade supporting 3200 MT/s operation, and the automotive-qualified AUT:E variant family from Micron. The POD (pseudo-open drain) I/O interface reduces I/O power at high data rates, and programmable data strobe preambles improve signal integrity at speed.
Technically, the device uses an 8n prefetch architecture with bank groups, on-die termination (ODT), and DLL-based timing. The x16 configuration uses a single DQS strobe pair with DM mask support, simplifying controller interface for medium-bandwidth systems. Ball-map and JEDEC-standard DDR4 x16 ballout enable reuse of reference layouts.
Typical applications include automotive infotainment and ADAS memory buffers, industrial human-machine interfaces, networking line cards, and FPGA-based vision and data-acquisition systems requiring 1 GB per component of high-bandwidth volatile memory.
Design consideration: DDR4 routing requires length-matched fly-by command/address lines and careful VTT termination; verify the controller supports 3200 MT/s or derate the speed grade selection accordingly.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: MT40A512M16AD-062E — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MT40A512M16AD-062E (동일 폼 팩터 및 풋프린트) — 차이점: Package, Clock Frequency, Interface, Memory Size, Data Rate.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MT40A512M16LY-062E AUT:E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT40A512M16TB-062E:R
✅ 드롭인✓ 재고 있음
$60 / 개
데이터시트 보기 →MT40A512M16TD-062E AAT:R
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT40A512M16LY-062E AIT:E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4A8G165WG-BCWE
✅ 드롭인✓ 재고 있음
$29.5313 / 개
데이터시트 보기 →NT5AD512M16C4-JRU
✅ 드롭인✓ 재고 있음
$83 / 개
데이터시트 보기 →MT40A512M16AD-062E 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| 메모리 크기 | 8 Gbit |
| 메모리 구성 | 512M x 16 |
| Clock Frequency | 1.6 GHz |
| Access Time (Row Cycle) | 19 ns |
| 인터페이스 | Parallel (POD) |
| 패키지 | 96-FBGA (7.5 mm x 13.5 mm) |
| 실장 유형 | Surface Mount |
| Automotive Qualification | AUT:E (automotive variant) |
| Speed Grade | -062E |
| Prefetch Architecture | 8n with bank groups |
| HS Code (USHTS) | 8542320071 |
MT40A512M16AD-062E 96-fbga (7.5 mm x 13.5 mm) 핀 구성 가이드
MT40A512M16AD-062E(96-fbga (7.5 mm x 13.5 mm) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: MT40A512M16AD-062E.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
MT40A512M16AD-062E 적합 용도: 6 애플리케이션s: Automotive Infotainment Memory, ADAS Sensor Processing, Industrial HMI and Vision Systems, FPGA Data Acquisition and Processing, Networking Line Cards, Medical Imaging Buffers.
Automotive Infotainment Memory
The MT40A512M16AD-062E AUT:E is purpose-built for automotive infotainment platforms where Micron's AUT-qualified DDR4 delivers the traceability and reliability in-vehicle systems demand. The 8 Gbit density per component provides 1 GB of volatile working memory for graphics frame buffers, navigation map data, and application workloads, while the x16 organization halves bus component count versus x8 designs. Running at up to 3200 MT/s, one component supplies the bandwidth headroom that 3D navigation rendering and 1080p video decoding require. Placed on the SoC DDR4 controller bus with fly-by routing and ODT enabled, it sustains high throughput across the automotive temperature environment specified in the Micron AUT:E datasheet.
추천
ADAS Sensor Processing
Advanced driver assistance systems accumulate camera, radar, and LiDAR data that must be buffered at line rate before fusion processing. The MT40A512M16AD-062E fits this role because its 1.6 GHz clock (3200 MT/s) and 512M x16 organization supply multi-GB/s bandwidth in a single 96-FBGA component, reducing BOM and layout complexity versus multiple x8 parts. The POD I/O structure limits I/O power at speed, important for thermal management in sealed ADAS controller enclosures. Designers typically attach the DDR4 bus to the ADAS SoC with length-matched fly-by traces and enable the programmable strobe preamble to preserve eye margin at full data rate across automotive temperature ranges.
추천
Industrial HMI and Vision Systems
Industrial human-machine interfaces and machine-vision controllers need high-bandwidth frame buffers with long-lifecycle sourcing. The MT40A512M16AD-062E provides 8 Gbit per component at DDR4-3200 class speeds, enough for dual 1080p display frame buffers or streaming image preprocessing pipelines. The 96-FBGA (7.5 mm x 13.5 mm) footprint fits dense controller boards, and the x16 bus keeps the processor interface simple. Industrial designs not requiring automotive traceability can also substitute the MT40A512M16LY-062E AIT:E industrial variant or Nanya NT5AD512M16C4-JRU on the same footprint for second-sourcing, protecting against DDR4 allocation cycles.
추천
FPGA Data Acquisition and Processing
High-speed data acquisition cards use the MT40A512M16AD-062E as streaming capture memory behind FPGA DDR4 hard controllers. A single x16 component avoids the pin congestion of x8 pairs and its 8 Gbit depth stores seconds of high-rate ADC samples. At a conservative 2400 MT/s implementation, timing closure is straightforward, while the -062E grade preserves the option to push to 3200 MT/s for higher capture bandwidth. The programmable data strobe preambles improve read margin, and FPGA memory calibration handles training automatically. The JEDEC-standard ballout also lets designers dual-source with Samsung K4A8G165WG-BCWE or Micron TB revisions without layout change.
추천
Networking Line Cards
Switch and router line cards use DDR4 for packet buffering, flow tables, and deep-packet-inspection scratch memory. The MT40A512M16AD-062E supplies 8 Gbit at 3200 MT/s per component; multiple x16 devices on a memory controller give predictable low-latency buffering that co-processor-based designs cannot match for cost. The 19 ns row cycle time bounds worst-case random-access latency, which matters for QoS-sensitive queue management. Networking designs frequently second-source across vendors; the same JEDEC 96-FBGA footprint accepts Samsung and Nanya equivalents, and Micron's LY/TB/TD die revisions provide supply-chain continuity for long-deployment telecom programs.
추천
Medical Imaging Buffers
Ultrasound and digital radiography systems stream high-resolution image frames into buffer memory before beam-forming or reconstruction. The MT40A512M16AD-062E delivers the 8 Gbit density and DDR4 bandwidth needed for uninterrupted frame capture at 60 fps or higher, and its AUT-grade silicon processes provide conservative reliability margins appreciated in medical equipment qualification. The x16 interface simplifies connection to imaging SoCs and FPGAs, and 96-FBGA rework capability supports field service. Designs can run below the maximum 3200 MT/s rate to widen timing margins, since the -062E grade at reduced clock retains full density benefits with relaxed signal-integrity constraints.
추천
추천 제품 요약
엔지니어링 참조 데이터: MT40A512M16AD-062E — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MT40A512M16LY-062E AUT:E | MT40A512M16TB-062E:R | MT40A512M16TD-062E AAT:R | K4A8G165WG-BCWE | NT5AD512M16C4-JRU |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5 x 13.5 mm) | 96-FBGA - same | 96-FBGA - same | 96-FBGA (7.5x13) - same footprint | 96-FBGA - same JEDEC ballout | 96-FBGA - same footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | Nanya Technology |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Automotive Grade | Yes (AUT:E) | Yes (AUT:E) | No (standard :R) | Yes (AAT automotive :R) | No (standard grade) | No (consumer/industrial) |
주요 차별점
- Automotive-qualified AUT:E variant (vs K4A8G165WG-BCWE)
- Lower-cost newer die revision available on same footprint (vs MT40A512M16TB-062E:R)
- Forward-lifecycle continuity within Micron family (vs MT40A512M16LY-062E AUT:E)
설계 노트
Route DQ[15:0] as a single byte lane length-matched to DQS/DQS# within the skew window required by the DDR4 controller (typically +/-25 mil at 3200 MT/s). Use fly-by topology for CK, CA, and CS with series termination toward VTT. Enable the MT40A512M16AD-062E programmable data strobe preamble during write calibration to widen eye margin at full 3200 MT/s operation. Refer to Micron DDR4 design guidelines in the MT40A512M16 datasheet signal-integrity section.
DDR4 uses separate VDD (core), VDDQ (I/O, POD12), and VPP rails - decouple each pin pair with 100 nF ceramics plus bulk capacitance near the 96-FBGA. Generate VTT termination with a dedicated sink/source LDO capable of bidirectional current. Estimated: at 3200 MT/s with x16 POD I/O, VDDQ transient currents can exceed 0.5 A per device; budget the VTT rail for the total DRAM population and verify plane droop in simulation.
The 96-ball FBGA requires via-in-pad or dog-bone fanout on a minimum 6-layer stack with solid reference planes. Place the component within 50 mm of the controller when possible; for multi-rank or multi-device buses follow the fly-by length rules in Micron's DDR4 layout application note. Escape DQ balls on inner layers to keep top-layer stubs under 30 mil, preserving SI at 1.6 GHz operation.
Do not interchange die revisions (AD vs LY/TB/TD) in a validated system without re-running memory training - DDR4 calibration can shift across Micron node migrations even on pin-compatible parts. Automotive buyers must confirm the AUT:E temperature grade and PPAP documentation with Micron before design freeze. Standard (non-AUT) second sources like Samsung K4A8G165WG-BCWE fit the same footprint but lack automotive qualification.
규정 준수 정보
Compliance declarations are not included in the provided web data. AUT:E suffix indicates Micron automotive-qualified variant; obtain RoHS/REACH certificates from Micron product page for PPAP submissions.
