2ED2103S06FXUMA1 vs 2ED21064S06JXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED2103S06FXUMA1 disebabkan oleh Infineon dan 2ED21064S06JXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2ED2103S06FXUMA1 2ED21064S06JXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver High-Side and Low-Side Gate Driver
Configuration Non-Inverting Half-Bridge (2 outputs, non-inverting)
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated Integrated
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Kemasan PG-DSO-8-69 (DSO-8 with exposed pad) PG-DSO-14 (14-pin SOIC)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -40C to +125C —
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Status RoHS Compliant ROHS3 Compliant
Tetstruktur — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Input Logic Compatibility — 3.3 V / 5 V CMOS
Suhu Operasi — -40C to +125C
Negative Gate Drive Robustness — -0.7 V

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