2ED2103S06FXUMA1 vs 2ED21064S06JXUMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma 2ED2103S06FXUMA1 tarafından Infineon ve 2ED21064S06JXUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | 2ED2103S06FXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Fonksiyon | Half-Bridge Gate Driver | High-Side and Low-Side Gate Driver |
| Configuration | Non-Inverting | Half-Bridge (2 outputs, non-inverting) |
| Technology | High-Voltage Level Shift (SOI) | — |
| Number of Drivers | 2 (high-side + low-side) | — |
| Driven Device Type | IGBT, N-Channel MOSFET | — |
| High-Side Offset Voltage (Max) | 650 V | — |
| Bootstrap Voltage (Max) | 675 V | — |
| Supply Voltage (VCC) | 10 V to 20 V | 10 V to 20 V |
| Source Current (typ.) | 0.29 A | — |
| Sink Current (typ.) | 0.7 A | — |
| Bootstrap Diode | Integrated | Integrated |
| Logic Input Compatibility | 3.3 V / 5 V | — |
| Under-Voltage Lockout (UVLO) | Yes (VCC and VBS) | — |
| Paket | PG-DSO-8-69 (DSO-8 with exposed pad) | PG-DSO-14 (14-pin SOIC) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | -40C to +125C | — |
| MSL Seviyesi | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| RoHS Durumu | Compliant | ROHS3 Compliant |
| Ağ Yapısı | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| İşletim Sıcaklığı | — | -40C to +125C |
| Negative Gate Drive Robustness | — | -0.7 V |