2ED2103S06FXUMA1 vs 2ED21064S06JXUMA1 比較

詳細並排比較 2ED2103S06FXUMA1 由 Infineon 與 2ED21064S06JXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2103S06FXUMA1 2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 ✓ 啟用中
Infineon
2ED21064S06JXUMA1 2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 ✓ 啟用中

規格比較

參數 2ED2103S06FXUMA1 2ED21064S06JXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Half-Bridge Gate Driver High-Side and Low-Side Gate Driver
Configuration Non-Inverting Half-Bridge (2 outputs, non-inverting)
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated Integrated
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
封裝 PG-DSO-8-69 (DSO-8 with exposed pad) PG-DSO-14 (14-pin SOIC)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40C to +125C —
MSL 等級 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS 狀態 Compliant ROHS3 Compliant
拓撲 — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Input Logic Compatibility — 3.3 V / 5 V CMOS
工作溫度 — -40C to +125C
Negative Gate Drive Robustness — -0.7 V

資料表與資源

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