2N7002LT1G vs BSS138LT1G-VB Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002LT1G disebabkan oleh onsemi dan BSS138LT1G-VB disebabkan oleh VBsemi Elec. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 2N7002LT1G | BSS138LT1G-VB |
|---|---|---|
| Merek | onsemi | VBsemi Elec |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | Single FET |
| Kemasan | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 3 | — |
| Kategori | Small Signal MOSFET | — |
| Technology | MOSFET | — |
| Manufacturer | onsemi (ON Semiconductor) | VBsemi Elec |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Jenis Transistor | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (Vdss) | — | 50 V |
| Continuous Drain Current (Id) | — | 200 mA (Ta) |
| Power Dissipation (Pd) | — | 225 mW (Ta) |
| Gate Threshold Voltage (Vgs th) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) Max | — | [DATA_NEEDED: RDS(on)] |
| Drive Voltage | — | [DATA_NEEDED: drive voltage] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Status RoHS | — | Compliant |
| Equivalent To | — | onsemi BSS138LT1G |