AS4C512M16D4A-62BCNTR vs K4A8G165WC-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci AS4C512M16D4A-62BCNTR disebabkan oleh Alliance Memory dan K4A8G165WC-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Alliance Memory
AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCNTR ✓ AktifSamsung Electronics
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE ✓ AktifPengandingan Spesifikasi
| Parametr | AS4C512M16D4A-62BCNTR | K4A8G165WC-BCWE |
|---|---|---|
| Merek | Alliance Memory | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $38.00 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit (512M x 16) | — |
| Tegangan Pemberi Arus | 1.14V ~ 1.26V (nominal 1.2V) | — |
| Clock Rate | 1600 MHz (DDR4-3200) | — |
| Latensi CAS | 18 ns | [DATA_NEEDED: CAS Latency] |
| Kemasan | 96-FBGA (7.5x13 mm) | 96-FBGA |
| Suhu Operasi | 0°C to +95°C (Commercial) | — |
| Antaramuka | POD (Pseudo Open Drain) | Differential (CK, /CK) |
| Kadar Data | 3200 MT/s | 3200 Mbps |
| Refresh | Auto-refresh and self-refresh | — |
| RoHS | Compliant | — |
| Moisture Sensitivity Level | 3 (168 Hours) | — |
| Write Cycle Time - Word, Page | 15 ns | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Standard Pack | 1500/reel (Tape & Reel) | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Gambaran Suhu Operasi | — | 0°C to +95°C |
| Burst Length | — | 8 (BL8) / 4 (BC4) |
| Number of Banks | — | 16 |
| Row Address Bits | — | 16 |
| Column Address Bits | — | 10 |
| Status RoHS | — | Compliant |
| JEDEC Standard | — | JEDEC DDR4 |