AS4C512M16D4B-62BCNTR vs H5AN8G6NAFR-UHC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci AS4C512M16D4B-62BCNTR disebabkan oleh Alliance Memory dan H5AN8G6NAFR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Alliance Memory
AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4B-62BCNTR ✓ AktifPengandingan Spesifikasi
| Parametr | AS4C512M16D4B-62BCNTR | H5AN8G6NAFR-UHC |
|---|---|---|
| Merek | Alliance Memory | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (CMOS) |
| Saiz Ingatan | 8 Gbit (512M x 16) | — |
| Kadar Data | 3200 MT/s | 2400 MT/s |
| Clock Frequency | 1600 MHz | — |
| Latensi CAS | 19 ns | — |
| Tegangan Pemberi Arus | 1.2 V (1.14V to 1.26V) | 1.2 V |
| Antaramuka | Parallel | — |
| Kemasan | 96-FBGA (7.5x13 mm) | 96-ball FBGA (TFBGA) |
| Suhu Operasi | 0°C to 95°C | 0C to +85C |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| JEDEC Standard | Compliant | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Revision | Rev.B | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Memory Density | — | 8 Gbit |
| Clock Architecture | — | Differential clock (CK_t / CK_c), fully synchronous |
| Refresh | — | Auto self-refresh |
| Precharge | — | Auto precharge function |
| Reset | — | Asynchronous reset function |
| Data Mask | — | DM function supported |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration function |
| Error Checking | — | CRC function |
| Write Leveling | — | Write leveling function supported |