AS4C512M16D4B-62BCNTR vs H5AN8G6NAFR-UHC Comparison

Detailed side-by-side comparison of AS4C512M16D4B-62BCNTR by Alliance Memory and H5AN8G6NAFR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Alliance Memory
AS4C512M16D4B-62BCNTR AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4B-62BCNTR ✓ Active
SK hynix
H5AN8G6NAFR-UHC H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC ✓ Active

Specification Comparison

Parameter AS4C512M16D4B-62BCNTR H5AN8G6NAFR-UHC
Brand Alliance Memory SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Memory Type DDR4 SDRAM DDR4 SDRAM (CMOS)
Memory Size 8 Gbit (512M x 16) —
Data Rate 3200 MT/s 2400 MT/s
Clock Frequency 1600 MHz —
CAS Latency 19 ns —
Supply Voltage 1.2 V (1.14V to 1.26V) 1.2 V
Interface Parallel —
Package 96-FBGA (7.5x13 mm) 96-ball FBGA (TFBGA)
Operating Temperature 0°C to 95°C 0C to +85C
Mounting Type Surface Mount Surface Mount
JEDEC Standard Compliant —
Organization 512M x 16 512M x 16
Revision Rev.B —
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Lead-Free Yes —
Memory Density — 8 Gbit
Clock Architecture — Differential clock (CK_t / CK_c), fully synchronous
Refresh — Auto self-refresh
Precharge — Auto precharge function
Reset — Asynchronous reset function
Data Mask — DM function supported
Termination — Dynamic on-chip termination (ODT)
Calibration — ZQ calibration function
Error Checking — CRC function
Write Leveling — Write leveling function supported

Datasheets & Resources

Browse All Products Create BOM Request Quote