AUIRF7640S2TR vs AUIRF7769L2TR Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci AUIRF7640S2TR disebabkan oleh Infineon dan AUIRF7769L2TR disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr AUIRF7640S2TR AUIRF7769L2TR
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) @ TA=25C 5.8 A —
Continuous Drain Current (ID) @ TC=25C 21 A —
Power Dissipation (PD) @ TA=25C 2.4 W —
Power Dissipation (PD) @ TC=25C 30 W —
On-Resistance RDS(on) 36 mΩ —
Total Gate Charge (Qg) 7.3 nC —
Kemasan DirectFET SB (Surface Mount) DirectFET Isometric L8 (DPAK footprint)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -40C to +150C [DATA_NEEDED: junction temp upper limit] [DATA_NEEDED: min/max junction temperature]
Technology HEXFET Power MOSFET (Automotive Grade) Automotive HEXFET Power MOSFET (trench)
Automotive Qualification AEC-Q101 (Automotive Grade per datasheet) AEC-Q100 qualified
Status RoHS Compliant [DATA_NEEDED: confirmed in datasheet] Compliant
Primary Application Automotive Class D audio amplifier output stage —
Drain-to-Source Voltage (V<sub>DS</sub>) — 100 V
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub> — 375 A
R<sub>DS(on)</sub> at V<sub>GS</sub>=10V — 3.5 mΩ (typical)
Gate Threshold Voltage (V<sub>GS(th)</sub>) — [DATA_NEEDED: V_GS(th) typical value]
Power Dissipation at T<sub>C</sub> — 125 W
Power Dissipation at T<sub>A</sub> — 3.3 W
Profile Height — 0.7 mm
Gate Charge (Q<sub>g</sub>) — [DATA_NEEDED: total gate charge]

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