BSC016N06NSATMA1 vs IPD135N03LGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC016N06NSATMA1 disebabkan oleh Infineon dan IPD135N03LGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC016N06NSATMA1 | IPD135N03LGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, TA) | 30 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.6 mΩ | — |
| Total Gate Charge (Qg) | 71 nC | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 139 W | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C | -55°C to +175°C (TJ max typical for OptiMOS) |
| Kemasan | PG-TDSON-8 FL (SuperSO8 5x6) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Gate Drive (recommended) | 10 V | — |
| Technology | OptiMOS™ 5 | — |
| Series | — | OptiMOS™ |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) | — | 30 A (Tc) |
| Power Dissipation (PD) | — | 31 W (Tc) |
| Kemasan / Case | — | PG-TO252-3 (DPAK), Surface Mount |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Gate Charge (Qg) | — | Ultra-low (per OptiMOS™ family spec) |
| Output Charge (Qoss) | — | Ultra-low (per OptiMOS™ family spec) |
| Lead-Free Finish | — | Yes |
| Qualification | — | Industrial (Infineon OptiMOS™ standard grade) |