BSZ018NE2LSATMA1 vs IPD90P04P405ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ018NE2LSATMA1 disebabkan oleh Infineon dan IPD90P04P405ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSZ018NE2LSATMA1 | IPD90P04P405ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 25V | — |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | -40 V |
| Continuous Drain Current (TA) | 23 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 69 W | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) typical at VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Gambaran Suhu Operasi | -55C to +150C | -55 °C to +175 °C (Tj) |
| Kemasan | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TO252-3-313 (DPAK, surface mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc) | — | -90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-Resistance RDS(on) at VGS = -10 V | — | 4.7 mΩ (typical) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |
| Process Technology | — | OptiMOS-P2 (trench + field plate) |