BSZ018NE2LSATMA1 vs IPD90P04P405ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ018NE2LSATMA1 sa pamamagitan ng Infineon at IPD90P04P405ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ018NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 23A/40A | Infineon
BSZ018NE2LSATMA1 ✓ NakahandaInfineon
IPD90P04P405ATMA2 - P-Channel 40V 90A OptiMOS MOSFET | Infineon
IPD90P04P405ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ018NE2LSATMA1 | IPD90P04P405ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 25V | — |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | -40 V |
| Continuous Drain Current (TA) | 23 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 69 W | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) typical at VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55 °C to +175 °C (Tj) |
| Packhaging | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TO252-3-313 (DPAK, surface mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc) | — | -90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-Resistance RDS(on) at VGS = -10 V | — | 4.7 mΩ (typical) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) |
| Process Technology | — | OptiMOS-P2 (trench + field plate) |