H5AN4G6NBJR-PBC vs K4A4G165WD-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G6NBJR-PBC disebabkan oleh SK hynix dan K4A4G165WD-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G6NBJR-PBC | K4A4G165WD-BCRC |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 4 Gbit | — |
| Organisasi | 256M x 16 (268435456 words x 16 bits) | 256M x 16 |
| Supply Voltage (VDD) | 1.2 V | — |
| Antaramuka | DDR4 (double data rate, synchronous) | — |
| Package Code | TFBGA | — |
| Kemasan | FBGA-96 (PBGA96), rectangular | FBGA-96 |
| Number of Terminals | 96 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Ciri-ciri | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC | — |
| Suhu Operasi | [DATA_NEEDED: temperature range for -C grade] | [DATA_NEEDED: operating temperature range] |
| Data Rate / Speed Grade | [DATA_NEEDED: speed grade PBC data rate] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency for PBC speed grade] | — |
| Process | CMOS | — |
| Lead-Free / Halogen-Free | Yes (per family datasheet, Lead-Free & Halogen-Free) | — |
| Temperature Grade | OTHER (per distributor listing) | — |
| Density | — | 4 Gbit |
| Speed Bin | — | DDR4-2400 (BCRC) |
| Tegangan Pemberi Arus | — | 1.2 V |
| Process Generation | — | Samsung D-die |
| Jenis Antaramuka | — | DDR4 (double data rate, parallel) |
| On-Die Termination (ODT) | — | Yes |
| Data Mask Function | — | Yes |
| Auto Precharge | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Status RoHS | — | Lead free / RoHS Compliant |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |