H5AN4G6NBJR-PBC vs K4A4G165WD-BCRC 比較
詳細並排比較 H5AN4G6NBJR-PBC 由 SK hynix 與 K4A4G165WD-BCRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G6NBJR-PBC | K4A4G165WD-BCRC |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 4 Gbit | — |
| 組織 | 256M x 16 (268435456 words x 16 bits) | 256M x 16 |
| Supply Voltage (VDD) | 1.2 V | — |
| 介面 | DDR4 (double data rate, synchronous) | — |
| Package Code | TFBGA | — |
| 封裝 | FBGA-96 (PBGA96), rectangular | FBGA-96 |
| Number of Terminals | 96 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 功能特色 | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC | — |
| 工作溫度 | [DATA_NEEDED: temperature range for -C grade] | [DATA_NEEDED: operating temperature range] |
| Data Rate / Speed Grade | [DATA_NEEDED: speed grade PBC data rate] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency for PBC speed grade] | — |
| Process | CMOS | — |
| Lead-Free / Halogen-Free | Yes (per family datasheet, Lead-Free & Halogen-Free) | — |
| Temperature Grade | OTHER (per distributor listing) | — |
| Density | — | 4 Gbit |
| Speed Bin | — | DDR4-2400 (BCRC) |
| 供應電壓 | — | 1.2 V |
| Process Generation | — | Samsung D-die |
| 介面類型 | — | DDR4 (double data rate, parallel) |
| On-Die Termination (ODT) | — | Yes |
| Data Mask Function | — | Yes |
| Auto Precharge | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| RoHS 狀態 | — | Lead free / RoHS Compliant |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |