H5AN4G6NBJR-UHC vs K4A4G165WD-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G6NBJR-UHC disebabkan oleh SK hynix dan K4A4G165WD-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G6NBJR-UHC | K4A4G165WD-BCTD |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V |
| Technology | CMOS | — |
| Suhu Operasi | -40C to +95C | 0C to +85C (commercial) |
| Kemasan | FBGA-96 (PBGA-96) | 96-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA) |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes (DM) | — |
| Asynchronous Reset | Yes (RESET_n) | — |
| On-Die Termination | Dynamic ODT | Dynamic ODT |
| ZQ Calibration | Yes | Yes (external RZQ resistor) |
| Write Leveling | Yes | — |
| CRC Function | Yes (command/address CRC) | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Density | — | 4 Gbit |
| Kadar Data | — | 2666 Mbps/pin (-BCTD speed grade) |
| Core Supply (VPP) | — | 2.5 V |
| Antaramuka | — | SSTL-12 |
| Data Mask | — | Yes (DM per byte lane) |
| Bank Architecture | — | 16 banks / 4 bank groups |
| CRC / CA Parity | — | CRC read/write support |
| Reset | — | Asynchronous reset (RESET_n) |