H5AN4G6NBJR-UHC vs K4A4G165WD-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN4G6NBJR-UHC sa pamamagitan ng SK hynix at K4A4G165WD-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung
K4A4G165WD-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5AN4G6NBJR-UHC | K4A4G165WD-BCTD |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 4 Gbit | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V |
| Technology | CMOS | — |
| Temperature na Operasyon | -40C to +95C | 0C to +85C (commercial) |
| Packhaging | FBGA-96 (PBGA-96) | 96-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes (DM) | — |
| Asynchronous Reset | Yes (RESET_n) | — |
| On-Die Termination | Dynamic ODT | Dynamic ODT |
| ZQ Calibration | Yes | Yes (external RZQ resistor) |
| Write Leveling | Yes | — |
| CRC Function | Yes (command/address CRC) | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Density | — | 4 Gbit |
| Rate ng Data | — | 2666 Mbps/pin (-BCTD speed grade) |
| Core Supply (VPP) | — | 2.5 V |
| Interface | — | SSTL-12 |
| Data Mask | — | Yes (DM per byte lane) |
| Bank Architecture | — | 16 banks / 4 bank groups |
| CRC / CA Parity | — | CRC read/write support |
| Reset | — | Asynchronous reset (RESET_n) |