H5AN4G8NBJR-UHCR vs H5AN4G8NBJR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-UHCR disebabkan oleh SK hynix dan H5AN4G8NBJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-UHCR | H5AN4G8NBJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasi | 512M x 8 | 512M x 8 |
| Speed Grade | UH (DDR4-2400 class, PC2400) | — |
| Tegangan Pemberi Arus | 1.2 V (VDD) | [DATA_NEEDED: VDD supply voltage] |
| Antaramuka | DDR4 SSTL12 | DDR4 (Double Data Rate IV) |
| Internal Prefetch | 8n | — |
| Kemasan | 78-ball FBGA (11 mm x 7.5 mm) | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount (BGA solder-down) | Surface Mount |
| Operating Case Temperature | -40C to +85C (industrial range) | — |
| Extended Temperature Range | Up to +95C case temperature (per datasheet conditions) | — |
| Lead Free | Yes | — |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | Lead-Free & Halogen-Free (RoHS Compliant) |
| Packaging Suffix | -R = Tape and Reel | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x specification] | Auto-refresh and self-refresh |
| Latensi CAS | [DATA_NEEDED: CL value for UH grade] | — |
| Kadar Data | — | [DATA_NEEDED: speed grade Mbps] |
| Bank Architecture | — | 8 banks with 4 bank groups (x8) |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Termination | — | On-Die Termination (ODT) |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |