H5AN4G8NBJR-UHCR vs H5AN4G8NBJR-RDC 比較
詳細並排比較 H5AN4G8NBJR-UHCR 由 SK hynix 與 H5AN4G8NBJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G8NBJR-UHCR | H5AN4G8NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| 組織 | 512M x 8 | 512M x 8 |
| Speed Grade | UH (DDR4-2400 class, PC2400) | — |
| 供應電壓 | 1.2 V (VDD) | [DATA_NEEDED: VDD supply voltage] |
| 介面 | DDR4 SSTL12 | DDR4 (Double Data Rate IV) |
| Internal Prefetch | 8n | — |
| 封裝 | 78-ball FBGA (11 mm x 7.5 mm) | 78-ball FBGA |
| 安裝類型 | Surface Mount (BGA solder-down) | Surface Mount |
| Operating Case Temperature | -40C to +85C (industrial range) | — |
| Extended Temperature Range | Up to +95C case temperature (per datasheet conditions) | — |
| Lead Free | Yes | — |
| 無鹵素 | Yes | — |
| RoHS 狀態 | Compliant | Lead-Free & Halogen-Free (RoHS Compliant) |
| Packaging Suffix | -R = Tape and Reel | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x specification] | Auto-refresh and self-refresh |
| CAS 延遲 | [DATA_NEEDED: CL value for UH grade] | — |
| 資料速率 | — | [DATA_NEEDED: speed grade Mbps] |
| Bank Architecture | — | 8 banks with 4 bank groups (x8) |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Termination | — | On-Die Termination (ODT) |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |