H5AN8G6NCJR-VKC vs H5AN8G8NDJR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NCJR-VKC disebabkan oleh SK hynix dan H5AN8G8NDJR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NCJR-VKC | H5AN8G8NDJR |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| Kadar Data | 2666 Mbps (MT/s) | 3200 MT/s |
| Clock Frequency | 1.333 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V (1.14V to 1.26V) |
| Antaramuka | Parallel | — |
| Suhu Operasi | 0C to +95C | 0°C to +95°C (Tc) |
| Kemasan | FBGA-96 | FBGA-78 (7.5x11 mm) |
| Jenis Pemasangan | Surface Mount | — |
| Standby Current | 28 mA | — |
| Operating Current | 45 mA | — |
| Ciri-ciri | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration | — |
| Lead-Free / Halogen-Free | Yes (per datasheet description) | — |
| Status RoHS | Compliant | — |
| Status Lingkungan Hidup | Active | — |
| Density | — | 8 Gb |
| Organisasi | — | 1G x 8 |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| Latensi CAS | — | 22 (typical) |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |