H5AN8G6NCJR-VKC vs H5AN8G8NDJR Perbandingan
Perbandingan bersamaan detil H5AN8G6NCJR-VKC dari SK hynix dan H5AN8G8NDJR dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G6NCJR-VKC | H5AN8G8NDJR |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| Laju Data | 2666 Mbps (MT/s) | 3200 MT/s |
| Clock Frequency | 1.333 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V (1.14V to 1.26V) |
| Antarmuka | Parallel | — |
| Suhu Kerja | 0C to +95C | 0°C to +95°C (Tc) |
| Paket | FBGA-96 | FBGA-78 (7.5x11 mm) |
| Tipe Mounting | Surface Mount | — |
| Standby Current | 28 mA | — |
| Operating Current | 45 mA | — |
| Fitur | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration | — |
| Lead-Free / Halogen-Free | Yes (per datasheet description) | — |
| Status RoHS | Compliant | — |
| Status Lingkungan Hidup | Active | — |
| Density | — | 8 Gb |
| Organisasi | — | 1G x 8 |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| Latensi CAS | — | 22 (typical) |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |