H5ANAG8NCMR-XNI vs MT40A2G8AG-062E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG8NCMR-XNI disebabkan oleh SK hynix dan MT40A2G8AG-062E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5ANAG8NCMR-XNI | MT40A2G8AG-062E |
|---|---|---|
| Merek | SK hynix | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | Volatile (DRAM) | DDR4 SDRAM |
| Memory Format | DDR4 SDRAM | — |
| Saiz Ingatan | 16 Gb | — |
| Memory Organization | x8 | — |
| Antaramuka | Parallel | — |
| Kadar Data | 3200 Mbps (DDR4-3200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Kemasan | FBGA-78 | 78-FBGA (7.5 x 11 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Product Status | Active | — |
| Manufacturer | SK Hynix | — |
| Technology | CMOS DDR4 SDRAM | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh rate] | — |
| Density | — | 16 Gbit |
| Organisasi | — | 2G x 8 |
| Speed | — | DDR4-3200 (3200 MT/s) |
| Clock Frequency | — | 1600 MHz |
| Access Time (Clock Cycle Time) | — | 0.625 ns (tCK) |
| Latensi CAS | — | CL22 (DDR4-3200) |
| Access Time | — | 19 ns |
| Supply Voltage VDD | — | 1.2 V |
| I/O Interface | — | POD12 (1.2 V pseudo-open drain) |
| VPP Voltage | — | 2.5 V |
| Number of Banks | — | 16 (4 bank groups x 4 banks) |
| Operating Temperature (AUT grade) | — | -40C to +95C (per Micron grade table) |
| Die Revision | — | AG (current generation) |