H5ANAG8NCMR-XNI vs MT40A2G8AG-062E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG8NCMR-XNI sa pamamagitan ng SK hynix at MT40A2G8AG-062E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron
MT40A2G8AG-062E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5ANAG8NCMR-XNI | MT40A2G8AG-062E |
|---|---|---|
| Brand | SK hynix | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | Volatile (DRAM) | DDR4 SDRAM |
| Memory Format | DDR4 SDRAM | — |
| Laki ng Memory | 16 Gb | — |
| Memory Organization | x8 | — |
| Interface | Parallel | — |
| Rate ng Data | 3200 Mbps (DDR4-3200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Packhaging | FBGA-78 | 78-FBGA (7.5 x 11 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Product Status | Active | — |
| Manufacturer | SK Hynix | — |
| Technology | CMOS DDR4 SDRAM | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh rate] | — |
| Density | — | 16 Gbit |
| Organisasyon | — | 2G x 8 |
| Speed | — | DDR4-3200 (3200 MT/s) |
| Clock Frequency | — | 1600 MHz |
| Access Time (Clock Cycle Time) | — | 0.625 ns (tCK) |
| Latensya ng CAS | — | CL22 (DDR4-3200) |
| Access Time | — | 19 ns |
| Supply Voltage VDD | — | 1.2 V |
| I/O Interface | — | POD12 (1.2 V pseudo-open drain) |
| VPP Voltage | — | 2.5 V |
| Number of Banks | — | 16 (4 bank groups x 4 banks) |
| Operating Temperature (AUT grade) | — | -40C to +95C (per Micron grade table) |
| Die Revision | — | AG (current generation) |