H5ANAG8NCMR-XNI vs MT40A2G8AG-062E 比較
詳細並排比較 H5ANAG8NCMR-XNI 由 SK hynix 與 MT40A2G8AG-062E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG8NCMR-XNI | MT40A2G8AG-062E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Volatile (DRAM) | DDR4 SDRAM |
| Memory Format | DDR4 SDRAM | — |
| 記憶體容量 | 16 Gb | — |
| Memory Organization | x8 | — |
| 介面 | Parallel | — |
| 資料速率 | 3200 Mbps (DDR4-3200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封裝 | FBGA-78 | 78-FBGA (7.5 x 11 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Product Status | Active | — |
| Manufacturer | SK Hynix | — |
| Technology | CMOS DDR4 SDRAM | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh rate] | — |
| Density | — | 16 Gbit |
| 組織 | — | 2G x 8 |
| Speed | — | DDR4-3200 (3200 MT/s) |
| Clock Frequency | — | 1600 MHz |
| Access Time (Clock Cycle Time) | — | 0.625 ns (tCK) |
| CAS 延遲 | — | CL22 (DDR4-3200) |
| Access Time | — | 19 ns |
| Supply Voltage VDD | — | 1.2 V |
| I/O Interface | — | POD12 (1.2 V pseudo-open drain) |
| VPP Voltage | — | 2.5 V |
| Number of Banks | — | 16 (4 bank groups x 4 banks) |
| Operating Temperature (AUT grade) | — | -40C to +95C (per Micron grade table) |
| Die Revision | — | AG (current generation) |