H5TC4G63AFR-PBA vs K4B4G1646E-BYMATCV Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63AFR-PBA disebabkan oleh SK hynix dan K4B4G1646E-BYMATCV disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ AktifPengandingan Spesifikasi
| Parametr | H5TC4G63AFR-PBA | K4B4G1646E-BYMATCV |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $3.98 | — |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organisasi | 256M x 16 | — |
| Supply Voltage (VDD/VDDQ) | 1.35V | — |
| Kadar Data | 1866 Mbps (PC3L-14900) | 1866 Mbps |
| Kemasan | 96-ball FBGA | 96-ball FBGA |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8 and 4 (with burst chop) | 8 (with burst chop 4) |
| CAS Latency (CL) | 11, 12, 13 | — |
| Gambaran Suhu Operasi | 0°C to +95°C (Tcase) | -40°C to +95°C |
| Antaramuka | 16-bit I/O | — |
| On-Die Termination (ODT) | Yes | Yes |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Partial Array Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Saiz Ingatan | — | 4 Gbit (256M x 16) |
| Tegangan Pemberi Arus | — | 1.35 V |
| I/O Voltage (VDDQ) | — | 1.35 V |
| Bilangan Pin | — | 96 |
| Latensi CAS | — | Programmable (e.g., 13, 12, 11) |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Status RoHS | — | Compliant |