H5TC4G63AFR-PBA vs K4B4G1646E-BYMATCV Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63AFR-PBA sa pamamagitan ng SK hynix at K4B4G1646E-BYMATCV sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5TC4G63AFR-PBA | K4B4G1646E-BYMATCV |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $3.98 | — |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organisasyon | 256M x 16 | — |
| Supply Voltage (VDD/VDDQ) | 1.35V | — |
| Rate ng Data | 1866 Mbps (PC3L-14900) | 1866 Mbps |
| Packhaging | 96-ball FBGA | 96-ball FBGA |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8 and 4 (with burst chop) | 8 (with burst chop 4) |
| CAS Latency (CL) | 11, 12, 13 | — |
| Hanay ng Temperature na Operasyon | 0°C to +95°C (Tcase) | -40°C to +95°C |
| Interface | 16-bit I/O | — |
| On-Die Termination (ODT) | Yes | Yes |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Partial Array Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Laki ng Memory | — | 4 Gbit (256M x 16) |
| Volte ng Pagbibigay | — | 1.35 V |
| I/O Voltage (VDDQ) | — | 1.35 V |
| Bilang ng Pins | — | 96 |
| Latensya ng CAS | — | Programmable (e.g., 13, 12, 11) |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Tindminan RoHS | — | Compliant |