H5TC4G63AFR-PBA vs K4B4G1646E-BYMATCV 比較
詳細並排比較 H5TC4G63AFR-PBA 由 SK hynix 與 K4B4G1646E-BYMATCV 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5TC4G63AFR-PBA | K4B4G1646E-BYMATCV |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $3.98 | — |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| 組織 | 256M x 16 | — |
| Supply Voltage (VDD/VDDQ) | 1.35V | — |
| 資料速率 | 1866 Mbps (PC3L-14900) | 1866 Mbps |
| 封裝 | 96-ball FBGA | 96-ball FBGA |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8 and 4 (with burst chop) | 8 (with burst chop 4) |
| CAS Latency (CL) | 11, 12, 13 | — |
| 工作溫度範圍 | 0°C to +95°C (Tcase) | -40°C to +95°C |
| 介面 | 16-bit I/O | — |
| On-Die Termination (ODT) | Yes | Yes |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Partial Array Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| 記憶體容量 | — | 4 Gbit (256M x 16) |
| 供應電壓 | — | 1.35 V |
| I/O Voltage (VDDQ) | — | 1.35 V |
| 腳位數 | — | 96 |
| CAS 延遲 | — | Programmable (e.g., 13, 12, 11) |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| RoHS 狀態 | — | Compliant |