IPD600N25N3GATMA1 vs IPP600N25N3GXKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD600N25N3GATMA1 disebabkan oleh Infineon dan IPP600N25N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD600N25N3GATMA1 IPP600N25N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 3 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 250 V —
Continuous Drain Current (ID) at Tc 25 A —
Power Dissipation (PD) at Tc 136 W —
On-Resistance RDS(on) max 60 mOhm at VGS = 10 V —
Tegangan Had Kepasaran [DATA_NEEDED: VGS(th) typical/min/max] —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount —
Jenis Pemasangan Surface Mount (Tape & Reel) Through Hole
Technology OptiMOS 3 trench MOSFET MOSFET (Metal Oxide)
Lead Plating Pb-free —
RoHS Compliance Compliant —
Boson Bebas Yes, per IEC 61249-2-21 —
JEDEC Qualification Qualified for target application —
Series — OptiMOS 3
Part Status — Active
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID) at Tc=25C — 25 A
Static Drain-to-Source On-Resistance (RDS(on)) max — 60 mOhm at VGS=10V
Power Dissipation (PD) at Tc=25C — 136 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Kemasan / Case — TO-220-3 (PG-TO220-3-1)
Gambaran Suhu Operasi — -55C to +175C (junction)
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]
Reverse Recovery Time (trr) — [DATA_NEEDED: trr typical value]
Lead Free Status — Lead Free / RoHS Compliant
Kiraan Pin — 3 (Gate, Drain, Source)

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