IPD600N25N3GATMA1 vs IPP600N25N3GXKSA1 比較
詳細並排比較 IPD600N25N3GATMA1 由 Infineon 與 IPP600N25N3GXKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD600N25N3GATMA1 | IPP600N25N3GXKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 3 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID) at Tc | 25 A | — |
| Power Dissipation (PD) at Tc | 136 W | — |
| On-Resistance RDS(on) max | 60 mOhm at VGS = 10 V | — |
| 閘極臨界電壓 | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount | — |
| 安裝類型 | Surface Mount (Tape & Reel) | Through Hole |
| Technology | OptiMOS 3 trench MOSFET | MOSFET (Metal Oxide) |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| 無鹵素 | Yes, per IEC 61249-2-21 | — |
| JEDEC Qualification | Qualified for target application | — |
| Series | — | OptiMOS 3 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 250 V |
| Continuous Drain Current (ID) at Tc=25C | — | 25 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 60 mOhm at VGS=10V |
| Power Dissipation (PD) at Tc=25C | — | 136 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| 封裝 / 外殼 | — | TO-220-3 (PG-TO220-3-1) |
| 工作溫度範圍 | — | -55C to +175C (junction) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Reverse Recovery Time (trr) | — | [DATA_NEEDED: trr typical value] |
| Lead Free Status | — | Lead Free / RoHS Compliant |
| 腳位數 | — | 3 (Gate, Drain, Source) |