IPL60R060CFD7AUMA1 vs IPD60R145CFD7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R060CFD7AUMA1 disebabkan oleh Infineon dan IPD60R145CFD7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPL60R060CFD7AUMA1 IPD60R145CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS™ CFD7 CoolMOS CFD7
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D, Tc) 40 A —
Power Dissipation (P_D, Tc) 219 W —
R_DS(on) (max) at V_GS = 10 V 60 mΩ —
R_DS(on) (typ, datasheet) 48 mΩ —
Gate Charge (Q_G, typ) at V_GS = 10 V 79 nC —
Input Capacitance (C_iss) 3193 pF —
Output Capacitance (C_oss) 62 pF —
Gate-Source Voltage (V_GS) ±20 V (max) —
Gate Threshold Voltage (V_GS(th), typ) 4.5 V —
Gambaran Suhu Operasi -40 °C to +150 °C —
Kemasan PG-VSON-4-1 (Surface Mount) TO-252AA (DPAK) surface mount
Jenis Pemasangan Surface Mount Surface Mount (DPAK, 3-pin + tab)
Aras MSL [DATA_NEEDED: MSL Level] [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
FET Type — N-Channel
Technology — CoolMOS CFD7 (superjunction)
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
Suhu Operasi — -55C to +150C (junction)
Kiraan Pin — 3 (Gate, Drain, Source)
Target Application — ZVS / LLC resonant converters, soft switching

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