IPL60R060CFD7AUMA1 vs IPD60R145CFD7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R060CFD7AUMA1 sa pamamagitan ng Infineon at IPD60R145CFD7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon
IPL60R060CFD7AUMA1 ✓ NakahandaInfineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPL60R060CFD7AUMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS™ CFD7 | CoolMOS CFD7 |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D, Tc) | 40 A | — |
| Power Dissipation (P_D, Tc) | 219 W | — |
| R_DS(on) (max) at V_GS = 10 V | 60 mΩ | — |
| R_DS(on) (typ, datasheet) | 48 mΩ | — |
| Gate Charge (Q_G, typ) at V_GS = 10 V | 79 nC | — |
| Input Capacitance (C_iss) | 3193 pF | — |
| Output Capacitance (C_oss) | 62 pF | — |
| Gate-Source Voltage (V_GS) | ±20 V (max) | — |
| Gate Threshold Voltage (V_GS(th), typ) | 4.5 V | — |
| Hanay ng Temperature na Operasyon | -40 °C to +150 °C | — |
| Packhaging | PG-VSON-4-1 (Surface Mount) | TO-252AA (DPAK) surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (DPAK, 3-pin + tab) |
| Level ng MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Technology | — | CoolMOS CFD7 (superjunction) |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | — | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | — | 83 W (T<sub>C</sub> = 25C) |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vth typical/min/max] |
| Body Diode | — | Integrated fast body diode (low Q<sub>rr</sub>) |
| Temperature na Operasyon | — | -55C to +150C (junction) |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) |
| Target Application | — | ZVS / LLC resonant converters, soft switching |