IPL60R060CFD7AUMA1 vs IPD60R145CFD7ATMA1 比較

詳細並排比較 IPL60R060CFD7AUMA1 由 Infineon 與 IPD60R145CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPL60R060CFD7AUMA1 IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon

IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon

IPL60R060CFD7AUMA1 ✓ 啟用中

規格比較

參數 IPL60R060CFD7AUMA1 IPD60R145CFD7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Series CoolMOS™ CFD7 CoolMOS CFD7
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D, Tc) 40 A —
Power Dissipation (P_D, Tc) 219 W —
R_DS(on) (max) at V_GS = 10 V 60 mΩ —
R_DS(on) (typ, datasheet) 48 mΩ —
Gate Charge (Q_G, typ) at V_GS = 10 V 79 nC —
Input Capacitance (C_iss) 3193 pF —
Output Capacitance (C_oss) 62 pF —
Gate-Source Voltage (V_GS) ±20 V (max) —
Gate Threshold Voltage (V_GS(th), typ) 4.5 V —
工作溫度範圍 -40 °C to +150 °C —
封裝 PG-VSON-4-1 (Surface Mount) TO-252AA (DPAK) surface mount
安裝類型 Surface Mount Surface Mount (DPAK, 3-pin + tab)
MSL 等級 [DATA_NEEDED: MSL Level] [DATA_NEEDED: MSL rating]
RoHS 狀態 Compliant Compliant
FET Type — N-Channel
Technology — CoolMOS CFD7 (superjunction)
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
工作溫度 — -55C to +150C (junction)
腳位數 — 3 (Gate, Drain, Source)
Target Application — ZVS / LLC resonant converters, soft switching

資料表與資源

瀏覽所有產品 建立 BOM 索取報價