IPP60R180P7XKSA1 vs IPL60R105P7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP60R180P7XKSA1 disebabkan oleh Infineon dan IPL60R105P7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP60R180P7XKSA1 IPL60R105P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology CoolMOS P7 (Superjunction N-Channel) Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) at TC=25°C 18 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current at TC=25°C] —
On-Resistance RDS(on) max at VGS=10V 180 mΩ —
Gate Threshold Voltage VGS(th) typ 3.5 V —
Gate Charge Qg typ [DATA_NEEDED: total gate charge at VGS=10V] —
Power Dissipation PD at TC=25°C 72 W —
Gambaran Suhu Operasi -55 °C to +150 °C -55C to +150C
Kemasan PG-TO220-3 (through-hole) PG-VSON-4 (4-pin SMD with exposed pad)
Jenis Pemasangan Through Hole Surface Mount
Bilangan Pin 3 (Gate, Drain, Source) —
Avalanche Energy Rated Yes —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Aras MSL N/A (through-hole) [DATA_NEEDED: MSL rating]
Series — CoolMOS P7
On-Resistance (RDS(on)) max — 105 mΩ
Continuous Drain Current (ID) at Tc — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Channel Type — N-Channel
Boson Bebas — Yes

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