IPP60R180P7XKSA1 vs IPL60R105P7AUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP60R180P7XKSA1 sa pamamagitan ng Infineon at IPL60R105P7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP60R180P7XKSA1 - 600V 18A 180mΩ CoolMOS P7 MOSFET | Infineon
IPP60R180P7XKSA1 ✓ NakahandaInfineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPP60R180P7XKSA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | CoolMOS P7 (Superjunction N-Channel) | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25°C] | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation PD at TC=25°C | 72 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | -55C to +150C |
| Packhaging | PG-TO220-3 (through-hole) | PG-VSON-4 (4-pin SMD with exposed pad) |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Bilang ng Pins | 3 (Gate, Drain, Source) | — |
| Avalanche Energy Rated | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Level ng MSL | N/A (through-hole) | [DATA_NEEDED: MSL rating] |
| Series | — | CoolMOS P7 |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Channel Type | — | N-Channel |
| Wala sa Halogen | — | Yes |