IPW60R180P7XKSA1 vs IPA60R180P7SXKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPW60R180P7XKSA1 disebabkan oleh Infineon dan IPA60R180P7SXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPW60R180P7XKSA1 IPA60R180P7SXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolMOS P7 (Superjunction, 7th generation) Superjunction (SJ) N-channel MOSFET
Polarity N-Channel —
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25C) 18 A —
On-Resistance RDS(on) max 180 mOhm —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Power Dissipation (Pd, Tc=25C) 72 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Drive Voltage (VGS, recommended) 10 V (typical), +/-20 V max —
Suhu Hubungan Operasi -55C to +150C —
Kemasan PG-TO247-3 (TO-247-3, through-hole, 3+tab pins) PG-TO220-3-312 (Through-Hole, 3 leads)
Jenis Pemasangan Through Hole Through Hole
Body Diode Fast body diode with low reverse recovery (Qrr) —
Integrated Gate Resistor Yes —
Status RoHS Compliant Compliant
Orderable Part Number IPW60R180P7XKSA1 (tube pack, industrial grade) —
Manufacturer — Infineon Technologies
Series — CoolMOS P7
Continuous Drain Current (ID) at Tc — 18 A
Static Drain-Source On-Resistance (RDS(on)) — 180 mOhm (max at 25C)
Power Dissipation (PD) at Tc — 26 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th)]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gambaran Suhu Operasi — -55C to +150C (junction)
Channel Type — N-Channel
Configuration — Single
Lead-Free — Yes

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