IPW60R180P7XKSA1 vs IPA60R180P7SXKSA1 比較
詳細並排比較 IPW60R180P7XKSA1 由 Infineon 與 IPA60R180P7SXKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPW60R180P7XKSA1 | IPA60R180P7SXKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | CoolMOS P7 (Superjunction, 7th generation) | Superjunction (SJ) N-channel MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 18 A | — |
| On-Resistance RDS(on) max | 180 mOhm | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (Pd, Tc=25C) | 72 W | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | — |
| Gate Drive Voltage (VGS, recommended) | 10 V (typical), +/-20 V max | — |
| 工作接面溫度 | -55C to +150C | — |
| 封裝 | PG-TO247-3 (TO-247-3, through-hole, 3+tab pins) | PG-TO220-3-312 (Through-Hole, 3 leads) |
| 安裝類型 | Through Hole | Through Hole |
| Body Diode | Fast body diode with low reverse recovery (Qrr) | — |
| Integrated Gate Resistor | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| Orderable Part Number | IPW60R180P7XKSA1 (tube pack, industrial grade) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 180 mOhm (max at 25C) |
| Power Dissipation (PD) at Tc | — | 26 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| 工作溫度範圍 | — | -55C to +150C (junction) |
| Channel Type | — | N-Channel |
| Configuration | — | Single |
| Lead-Free | — | Yes |