IQEH50NE2LM7ZCGATMA1 vs IAUCN08S7L024ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH50NE2LM7ZCGATMA1 disebabkan oleh Infineon dan IAUCN08S7L024ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQEH50NE2LM7ZCGATMA1 IAUCN08S7L024ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 150 W —
Maximum Junction Temperature +175 degrees C —
Gambaran Suhu Operasi -55 degrees C to +175 degrees C -55C to +175C (Tj)
Kemasan PG-TTFN-9-3 PG-TDSON-8-34 (SSO8 5x6 mm²)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) OptiMOS™ 7 N-channel trench MOSFET
Status RoHS Compliant Compliant
Qualification Industrial grade per Infineon datasheet —
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) — 177 A (Tj)
Continuous Drain Current (Silicon-limited) — 150 A
On-Resistance RDS(on) max — 2.4 mΩ at VGS=10 V
Power Dissipation (PD) — 148 W (Tc)
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg typ]
Avalanche Energy Rated — Yes (single-pulse)
Automotive Qualification — AEC-Q101 qualified
Aras MSL — MSL1 (per JEDEC J-STD-020)

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