IRF150P220AKMA1 vs IRFP250MPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF150P220AKMA1 disebabkan oleh Infineon dan IRFP250MPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF150P220AKMA1 | IRFP250MPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $2.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF150P220AKMA1 | IRFP250MPBF |
| Technology | StrongIRFET | HEXFET (IR MOSFET) |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS max) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 203 A | — |
| On-Resistance (RDS(on) max) at VGS=10V | 2.7 mOhm | — |
| Gate-Source Voltage (VGS max) | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (Pd) at Tc=25C | 556 W | 214 W |
| Power Dissipation (Pd) at Ta=25C | 3.8 W | — |
| Gambaran Suhu Operasi | -55C to +175C | — |
| Kemasan | TO-247-3 (PG-TO247-3) | — |
| Jenis Pemasangan | Through Hole | Through Hole |
| Terminal Finish | Tin (Sn) | — |
| JESD-609 Code | e3 | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Drain-Source Voltage (Vds) | — | 200 V |
| Continuous Drain Current (Id) at Tc=25C | — | 30 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current value] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 75 mOhm max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 4 V (typ) |
| Total Gate Charge (Qg) | — | 82 nC |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Kemasan / Case | — | TO-247AC (3-pin + tab) |
| Bilangan Pin | — | 3 |
| Avalanche Rated | — | Yes |
| Aras MSL | — | 1 (unlimited) |