IRF150P220AKMA1 vs IRFP250MPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF150P220AKMA1 sa pamamagitan ng Infineon at IRFP250MPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF150P220AKMA1 IRFP250MPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Presyo ng Yunit (USD) — $2.55
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRF150P220AKMA1 IRFP250MPBF
Technology StrongIRFET HEXFET (IR MOSFET)
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS max) 150 V —
Continuous Drain Current (ID) at Tc=25C 203 A —
On-Resistance (RDS(on) max) at VGS=10V 2.7 mOhm —
Gate-Source Voltage (VGS max) [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typ] —
Power Dissipation (Pd) at Tc=25C 556 W 214 W
Power Dissipation (Pd) at Ta=25C 3.8 W —
Hanay ng Temperature na Operasyon -55C to +175C —
Packhaging TO-247-3 (PG-TO247-3) —
Uri ng Pagpapasok Through Hole Through Hole
Terminal Finish Tin (Sn) —
JESD-609 Code e3 —
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Drain-Source Voltage (Vds) — 200 V
Continuous Drain Current (Id) at Tc=25C — 30 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current value]
Static Drain-Source On-Resistance (RDS(on)) — 75 mOhm max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) — 4 V (typ)
Total Gate Charge (Qg) — 82 nC
Temperature ng Junction na Operasyon — -55C to +175C
Packhaging / Kaso — TO-247AC (3-pin + tab)
Bilang ng Pins — 3
Avalanche Rated — Yes
Level ng MSL — 1 (unlimited)

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