IRF520NPBF vs IRF530NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF520NPBF disebabkan oleh Infineon dan IRF530NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF520NPBF | IRF530NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V_DSS) | 100 V | — |
| Continuous Drain Current (I_D) at Tc | 9.7 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-to-Source Voltage (V_GS) max | ±20 V | — |
| R_DS(on) max at V_GS=10V | 200 mOhm | — |
| Total Gate Charge (Q_g) | 16.7 nC | — |
| Power Dissipation (P_D) at Tc | 48 W | — |
| Gambaran Suhu Operasi | -55C to +175C | — |
| Kemasan | TO-220AB (through-hole) | — |
| Jenis Pemasangan | Through Hole | Through Hole |
| Aras MSL | 1 (unlimited) | N/A (through-hole) |
| Status RoHS | Compliant (Pb-free) | Compliant |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Technology | HEXFET (vertical DMOS) | — |
| Part Number | — | IRF530NPBF |
| Jenis Transistor | — | N-Channel HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 17 A |
| Pulsed Drain Current (IDM) | — | 60 A |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 90 mOhm (max, approximate per datasheet) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Maximum Power Dissition (Pd) at Tc | — | 70 W |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Kemasan / Case | — | TO-220AB (through-hole) |
| Avalanche Rated | — | Yes |
| Configuration | — | Single N-channel, 3 pins (Gate, Drain, Source) |