IRF520NPBF vs IRF530NPBF 比較
詳細並排比較 IRF520NPBF 由 Infineon 與 IRF530NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF520NPBF | IRF530NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V_DSS) | 100 V | — |
| Continuous Drain Current (I_D) at Tc | 9.7 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-to-Source Voltage (V_GS) max | ±20 V | — |
| R_DS(on) max at V_GS=10V | 200 mOhm | — |
| Total Gate Charge (Q_g) | 16.7 nC | — |
| Power Dissipation (P_D) at Tc | 48 W | — |
| 工作溫度範圍 | -55C to +175C | — |
| 封裝 | TO-220AB (through-hole) | — |
| 安裝類型 | Through Hole | Through Hole |
| MSL 等級 | 1 (unlimited) | N/A (through-hole) |
| RoHS 狀態 | Compliant (Pb-free) | Compliant |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Technology | HEXFET (vertical DMOS) | — |
| Part Number | — | IRF530NPBF |
| 電晶體類型 | — | N-Channel HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 17 A |
| Pulsed Drain Current (IDM) | — | 60 A |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 90 mOhm (max, approximate per datasheet) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Maximum Power Dissition (Pd) at Tc | — | 70 W |
| 工作接面溫度 | — | -55 C to +175 C |
| 封裝 / 外殼 | — | TO-220AB (through-hole) |
| Avalanche Rated | — | Yes |
| Configuration | — | Single N-channel, 3 pins (Gate, Drain, Source) |