IRF520NPBF vs IRF530NPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF520NPBF tarafından Infineon ve IRF530NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF520NPBF | IRF530NPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V_DSS) | 100 V | — |
| Continuous Drain Current (I_D) at Tc | 9.7 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-to-Source Voltage (V_GS) max | ±20 V | — |
| R_DS(on) max at V_GS=10V | 200 mOhm | — |
| Total Gate Charge (Q_g) | 16.7 nC | — |
| Power Dissipation (P_D) at Tc | 48 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +175C | — |
| Paket | TO-220AB (through-hole) | — |
| Montaj Türü | Through Hole | Through Hole |
| MSL Seviyesi | 1 (unlimited) | N/A (through-hole) |
| RoHS Durumu | Compliant (Pb-free) | Compliant |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Technology | HEXFET (vertical DMOS) | — |
| Part Number | — | IRF530NPBF |
| Transistor Türü | — | N-Channel HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 17 A |
| Pulsed Drain Current (IDM) | — | 60 A |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 90 mOhm (max, approximate per datasheet) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Maximum Power Dissition (Pd) at Tc | — | 70 W |
| İşletim Jant Sıcaklığı | — | -55 C to +175 C |
| Paket / Kas | — | TO-220AB (through-hole) |
| Avalanche Rated | — | Yes |
| Configuration | — | Single N-channel, 3 pins (Gate, Drain, Source) |