IRF520NPBF vs IRF530NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF520NPBF sa pamamagitan ng Infineon at IRF530NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF520NPBF IRF530NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Series HEXFET —
FET Type N-Channel —
Drain-to-Source Voltage (V_DSS) 100 V —
Continuous Drain Current (I_D) at Tc 9.7 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current value] —
Gate-to-Source Voltage (V_GS) max ±20 V —
R_DS(on) max at V_GS=10V 200 mOhm —
Total Gate Charge (Q_g) 16.7 nC —
Power Dissipation (P_D) at Tc 48 W —
Hanay ng Temperature na Operasyon -55C to +175C —
Packhaging TO-220AB (through-hole) —
Uri ng Pagpapasok Through Hole Through Hole
Level ng MSL 1 (unlimited) N/A (through-hole)
Tindminan RoHS Compliant (Pb-free) Compliant
Lead-Free Finish Yes (PBF suffix) —
Technology HEXFET (vertical DMOS) —
Part Number — IRF530NPBF
Uri ng Transistor — N-Channel HEXFET Power MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 17 A
Pulsed Drain Current (IDM) — 60 A
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 90 mOhm (max, approximate per datasheet)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Maximum Power Dissition (Pd) at Tc — 70 W
Temperature ng Junction na Operasyon — -55 C to +175 C
Packhaging / Kaso — TO-220AB (through-hole)
Avalanche Rated — Yes
Configuration — Single N-channel, 3 pins (Gate, Drain, Source)

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