IRF7205TRPBF vs IRF7205PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7205TRPBF disebabkan oleh Infineon dan IRF7205PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7205TRPBF | IRF7205PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel MOSFET | — |
| Technology | IR HEXFET (4th generation) | IR MOSFET (HEXFET, planar cell) |
| Drain-to-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) at TA=25°C | -4.6 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max @ VGS=-10V | 70 mΩ | — |
| On-Resistance RDS(on) max @ VGS=-4.5V | 130 mΩ | — |
| Gate Threshold Voltage VGS(th) | -1.0 V to -3.0 V | -1 V to -3 V (typical) |
| Total Gate Charge Qg | 27 nC | — |
| Pembuangan Kuasa (TC=25°C) | 2.5 W | — |
| Suhu Hubungan Operasi | -55 °C to +150 °C | — |
| Kemasan | SO-8 (8-SO) | SO-8 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Lead-Free (PBF suffix), RoHS compliant | — |
| Packaging | Tape & Reel (TR suffix) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -4.6 A |
| On-Resistance RDS(on) max at VGS=-10V | — | 70 mOhm |
| On-Resistance RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Gambaran Suhu Operasi | — | -55 C to +150 C (junction) |
| Power Dissipation (TA=25C) | — | [DATA_NEEDED: Pd at TA=25C] |
| Switching Frequency Optimization | — | Below 100 kHz |
| Qualification | — | JEDEC standard |
| Status RoHS | — | Compliant (Pb-free per PBF suffix) |
| Generation | — | Fourth Generation HEXFET |