IRF7389PBF vs IRF7389TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7389PBF disebabkan oleh Infineon dan IRF7389TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7389PBF | IRF7389TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Configuration | N and P-Channel (complementary half-bridge) | Dual N+P Complementary Half-Bridge |
| Drain-to-Source Voltage N-Ch (V_DSS) | 30 V | — |
| Drain-to-Source Voltage P-Ch (V_DSS) | -30 V | — |
| Continuous Drain Current N-Ch (I_D) | 7.3 A | — |
| Continuous Drain Current P-Ch (I_D) | -5.3 A | — |
| On-Resistance N-Ch R_DS(on) max | 0.029 ohm at V_GS=10V | — |
| On-Resistance P-Ch R_DS(on) max | 0.058 ohm at V_GS=10V | — |
| Total Gate Charge N-Ch (Q_g) typical | 22 nC | — |
| Total Gate Charge P-Ch (Q_g) typical | 23 nC | — |
| Power Dissipation (P_D) | 2.5 W | — |
| Technology | Generation V HEXFET | HEXFET Generation V (IR MOSFET) |
| Kemasan | SO-8 (SOIC-8) surface mount | 8-SO (SOIC-8) |
| Pinout | Industry-standard complementary SO-8 | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: full operating temperature range] | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| Transistor Polarity | — | N and P Channel |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (N-Ch, Id) | — | 7.3 A |
| Continuous Drain Current (P-Ch, Id) | — | -5.3 A |
| On-Resistance RDS(on) Max | — | 29 mOhm |
| Power Dissipation (Pd) | — | 2.5 W |
| Suhu Operasi | — | -55C to +150C |
| Lead Free / RoHS | — | Lead Free / RoHS Compliant |
| Aras MSL | — | 1 |
| Manufacturer | — | Infineon (formerly International Rectifier) |