IRF7389PBF vs IRF7389TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7389PBF sa pamamagitan ng Infineon at IRF7389TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7389PBF IRF7389TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Configuration N and P-Channel (complementary half-bridge) Dual N+P Complementary Half-Bridge
Drain-to-Source Voltage N-Ch (V_DSS) 30 V —
Drain-to-Source Voltage P-Ch (V_DSS) -30 V —
Continuous Drain Current N-Ch (I_D) 7.3 A —
Continuous Drain Current P-Ch (I_D) -5.3 A —
On-Resistance N-Ch R_DS(on) max 0.029 ohm at V_GS=10V —
On-Resistance P-Ch R_DS(on) max 0.058 ohm at V_GS=10V —
Total Gate Charge N-Ch (Q_g) typical 22 nC —
Total Gate Charge P-Ch (Q_g) typical 23 nC —
Power Dissipation (P_D) 2.5 W —
Technology Generation V HEXFET HEXFET Generation V (IR MOSFET)
Packhaging SO-8 (SOIC-8) surface mount 8-SO (SOIC-8)
Pinout Industry-standard complementary SO-8 —
Hanay ng Temperature na Operasyon [DATA_NEEDED: full operating temperature range] —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant —
Lead-Free Yes —
Wala sa Halogen Yes —
Avalanche Rated Yes (fully avalanche rated) Yes
Transistor Polarity — N and P Channel
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (N-Ch, Id) — 7.3 A
Continuous Drain Current (P-Ch, Id) — -5.3 A
On-Resistance RDS(on) Max — 29 mOhm
Power Dissipation (Pd) — 2.5 W
Temperature na Operasyon — -55C to +150C
Lead Free / RoHS — Lead Free / RoHS Compliant
Level ng MSL — 1
Manufacturer — Infineon (formerly International Rectifier)

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