IRF7389PBF vs IRF7389TRPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF7389PBF tarafından Infineon ve IRF7389TRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF7389PBF | IRF7389TRPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Configuration | N and P-Channel (complementary half-bridge) | Dual N+P Complementary Half-Bridge |
| Drain-to-Source Voltage N-Ch (V_DSS) | 30 V | — |
| Drain-to-Source Voltage P-Ch (V_DSS) | -30 V | — |
| Continuous Drain Current N-Ch (I_D) | 7.3 A | — |
| Continuous Drain Current P-Ch (I_D) | -5.3 A | — |
| On-Resistance N-Ch R_DS(on) max | 0.029 ohm at V_GS=10V | — |
| On-Resistance P-Ch R_DS(on) max | 0.058 ohm at V_GS=10V | — |
| Total Gate Charge N-Ch (Q_g) typical | 22 nC | — |
| Total Gate Charge P-Ch (Q_g) typical | 23 nC | — |
| Power Dissipation (P_D) | 2.5 W | — |
| Technology | Generation V HEXFET | HEXFET Generation V (IR MOSFET) |
| Paket | SO-8 (SOIC-8) surface mount | 8-SO (SOIC-8) |
| Pinout | Industry-standard complementary SO-8 | — |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: full operating temperature range] | — |
| Montaj Türü | Surface Mount | Surface Mount |
| RoHS Durumu | Compliant | — |
| Lead-Free | Yes | — |
| Klorürsüz | Yes | — |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| Transistor Polarity | — | N and P Channel |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (N-Ch, Id) | — | 7.3 A |
| Continuous Drain Current (P-Ch, Id) | — | -5.3 A |
| On-Resistance RDS(on) Max | — | 29 mOhm |
| Power Dissipation (Pd) | — | 2.5 W |
| İşletim Sıcaklığı | — | -55C to +150C |
| Lead Free / RoHS | — | Lead Free / RoHS Compliant |
| MSL Seviyesi | — | 1 |
| Manufacturer | — | Infineon (formerly International Rectifier) |