IRF9Z24NPBF vs IRF9540NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9Z24NPBF disebabkan oleh Infineon dan IRF9540NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF9Z24NPBF IRF9540NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Drain-to-Source Voltage (Vdss) -55 V —
Continuous Drain Current (Id) @ Tc=25C -12 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (Vgs) max ±20 V —
Rds(on) max @ Vgs=-10V 0.175 ohm —
Gate Charge (Qg) typ 12.7 nC —
Power Dissipation (Pd) @ Tc=25C 45 W —
Thermal Resistance Junction-to-Case (RthJC) 1.67 C/W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-220AB (3-pin) —
Jenis Pemasangan Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix) —
Gate Threshold Voltage (Vgs(th)) typ [DATA_NEEDED: Vgs(th)] —
Avalanche Energy Rated Yes (single-pulse) —
Technology HEXFET (planar DMOS, Gen 5) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF9540NPBF
Jenis Transistor — P-Channel MOSFET (HEXFET Power MOSFET)
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at Tc — -23 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — +/-20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V — 117 mOhm
Total Gate Charge (Qg) — 64.7 nC
Power Dissipation (PD) at Tc=25C — 140 W
Gambaran Suhu Hubungan Operasi — -55 C to +175 C
Kemasan / Case — TO-220AB (through-hole, 3 pins + tab)
Process Technology — Planar HEXFET cell structure
Qualification — JEDEC standard
Status RoHS — Compliant
Lead-Free — Yes (Pb-free matte tin plating)

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