IRFB4110PBF vs IRF2907ZSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB4110PBF disebabkan oleh Infineon dan IRF2907ZSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFB4110PBF | IRF2907ZSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $1.55 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A (bond-wire limited) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΩ | — |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 370 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | -55 C to +175 C |
| Kemasan | TO-220AB (through-hole) | D2PAK (TO-263AB) surface mount |
| Technology | HEXFET (planar DMOS) | IR HEXFET / IR MOSFET |
| Jenis Pemasangan | Through Hole | Surface Mount (SMD) |
| Status RoHS | Compliant (Pb-free suffix) | Compliant |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | Yes (PBF suffix) |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage V(BR)DSS | — | 75 V |
| Arus Kumpal Tetap (TC=25°C) | — | 170 A |
| Arus Kumpal Tetap (TC=100°C) | — | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS = 10 V | — | 4.5 mOhm |
| RDS(on) typical at VGS = 10 V | — | 3.5 mOhm |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 4.0 V |
| Maximum Power Dissipation (TC = 25 C) | — | 300 W |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |
| Packaging | — | Tape and Reel (left orientation) |
| Avalanche Rating | — | Repetitive avalanche allowed up to TJ(max) |