IRFB4110PBF vs IRF2907ZSTRLPBF Comparison

Detailed side-by-side comparison of IRFB4110PBF by Infineon and IRF2907ZSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB4110PBF IRF2907ZSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $1.55
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25Β°C 120 A (bond-wire limited) β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
On-Resistance RDS(on) max at VGS=10V 4.5 mΞ© β€”
On-Resistance RDS(on) typ at VGS=10V 3.7 mΞ© β€”
Power Dissipation (PD) at TC=25Β°C 370 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C -55 C to +175 C
Package TO-220AB (through-hole) D2PAK (TO-263AB) surface mount
Technology HEXFET (planar DMOS) IR HEXFET / IR MOSFET
Mounting Type Through Hole Surface Mount (SMD)
RoHS Status Compliant (Pb-free suffix) Compliant
Lead-Free Yes (PBF suffix denotes Pb-free) Yes (PBF suffix)
Transistor Polarity β€” N-Channel
Drain-Source Voltage V(BR)DSS β€” 75 V
Continuous Drain Current (TC = 25 C) β€” 170 A
Continuous Drain Current (TC = 100 C) β€” [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS = 10 V β€” 4.5 mOhm
RDS(on) typical at VGS = 10 V β€” 3.5 mOhm
Gate Threshold Voltage VGS(th) β€” 2.0 V to 4.0 V
Maximum Power Dissipation (TC = 25 C) β€” 300 W
Pin Count β€” 3 (Gate, Drain, Source)
Packaging β€” Tape and Reel (left orientation)
Avalanche Rating β€” Repetitive avalanche allowed up to TJ(max)

Datasheets & Resources

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