IRFB4110PBF vs IRF2907ZSTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB4110PBF sa pamamagitan ng Infineon at IRF2907ZSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB4110PBF IRF2907ZSTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock In Stock —
Presyo ng Yunit (USD) $1.55 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 120 A (bond-wire limited) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance RDS(on) max at VGS=10V 4.5 mΩ —
On-Resistance RDS(on) typ at VGS=10V 3.7 mΩ —
Power Dissipation (PD) at TC=25°C 370 W —
Temperature ng Junction na Operasyon -55 °C to +175 °C -55 C to +175 C
Packhaging TO-220AB (through-hole) D2PAK (TO-263AB) surface mount
Technology HEXFET (planar DMOS) IR HEXFET / IR MOSFET
Uri ng Pagpapasok Through Hole Surface Mount (SMD)
Tindminan RoHS Compliant (Pb-free suffix) Compliant
Lead-Free Yes (PBF suffix denotes Pb-free) Yes (PBF suffix)
Transistor Polarity — N-Channel
Drain-Source Voltage V(BR)DSS — 75 V
Patuloy na Drain Current (TC=25°C) — 170 A
Patuloy na Drain Current (TC=100°C) — [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS = 10 V — 4.5 mOhm
RDS(on) typical at VGS = 10 V — 3.5 mOhm
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V
Maximum Power Dissipation (TC = 25 C) — 300 W
Bilang ng Pin — 3 (Gate, Drain, Source)
Packaging — Tape and Reel (left orientation)
Avalanche Rating — Repetitive avalanche allowed up to TJ(max)

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